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其他应用 FLASH, LOGIC, POWER, SiGe |
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TEM Analysis of ICs |
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图-1 (a)50 nm Gate Structure；(b)Ultra-thin Gate Dielectrics；(c)Via Structure |
TEM/HAADF image of Silicide
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图-2 (a) TEM；(b) HAADF |
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TEM Analysis of SiGe |
High Resolution TEM Imaging
图-3 (a) |
图-3 (b) |
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TEM Analysis of SRAM |
Total delayer to expose the bare Si substrate
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图-4 (a) Plan-view TEM；(b) Plan-view TEM |
Dislocation in SRAM cell array
图-5 |
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TEM Analysis of DRAM |
HSG structure
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图-6 Capacitor aspect ratio = 1.98/0.24= 8.25 |
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图-7 |
